Automatic BGA Reballing Machine

                                                                           Automatic BGA Reballing Machine

An Automatic BGA Reballing Machine is a specialized piece of equipment designed to repair Ball Grid Array (BGA) packages 

on Printed Circuit Boards (PCBs). The machine automates the process of removing old and damaged solder balls, cleaning the 

BGA package, and applying new solder balls to the package. The machine uses advanced technology that enables it to carry out 

the reballing process quickly, accurately, and efficiently.

1.Application Of laser positioning Automatic BGA Reballing Machine

Work with all kinds of motherboards or PCBA.

Solder, reball, desoldering different kind of chips: BGA,PGA,POP,BQFP,QFN,SOT223,PLCC,TQFP,TDFN,TSOP, PBGA,CPGA,LED chip.

DH-G620 is totally same as DH-A2, automatically desoldering, pick-up, puting back and soldering for a chip, with optical alignment for mounting,no matter whether you have experience or not, you can master it in one hour.

2.Product Features 

3.Specification of DH-A2

4.Why Choose Our Automatic BGA Reballing Machine Split Vision? 

5.Certificate 

UL, E-MARK, CCC, FCC, CE ROHS certificates. Meanwhile, to improve and perfect the quality system, Dinghua has passed ISO, GMP, FCCA, C-TPAT on-site audit certification.

6.Packing & Shipment 

7. Related knowledge

How does the lithography machine in the chip industry engrave a line width that is much smaller than its own wavelength?

Author: Users Know Almost
Source: Knowing
Copyright: Owned by the author. For commercial reprints, please contact the author for authorization. For non-commercial reprints, please indicate the source.

I believe that the entire chip industry, including Intel, GF, TSMC, and Samsung, has been operating at the 22nm and 28nm nodes for a long time and must have encountered the limits of 193nm ArF technology. However, achieving features of 50nm or smaller, which is 1/4 of the wavelength, is already impressive, isn't it?

In fact, the first point is a naming issue. The "xxnm" node does not imply that the actual structure is that small. This number originally refers to the half-pitch of the structure, meaning half of the period. Later, with advancements, it generally refers to the minimum feature size. For example, if there is a row of protrusions or depressions with a 100nm period, where the width of the protrusions is 20nm and the gap is 80nm, it is technically accurate to describe it as a 20nm process.

Additionally, 32nm, 22nm, and 14nm are merely indicators of technical nodes, and the smallest corresponding structures might be 60nm, 40nm, or 25nm-significantly larger than the nominal values. For instance, it is often stated that Intel's 14nm process is larger than Samsung's and TSMC's 10nm density, which can be misleading. But how can we create minimum features much smaller than half the cycle?

From the perspective of light field distribution, the width of a peak or valley may potentially exceed the diffraction limit. However, the properties of the photoresist can be leveraged! The solubility of the photoresist after exposure depends on the exposure amount, but this relationship is highly non-linear. By controlling this non-linearity, we can ensure that a small feature does not dissolve at all while a larger one dissolves easily. By accurately managing the exposure amount, the line width of the minimum structure can be precisely controlled.

Imagine a light field that is uniformly distributed like a sine wave. The exposure can be controlled so that only the positions near the peak can completely dissolve, while the other parts remain intact. The final structure would resemble a sine wave, but with a minimum feature size that is much smaller than the width of one peak of the light field distribution.

Of course, this method cannot produce infinitely small features. The solubility characteristics of the photoresist are critical, and each formulation is complex, needing to match the existing process. Moreover, the photoresist coating is thick, and the exposure distribution on the surface differs from the overall coating. Its mechanical properties may not maintain the integrity of narrow details.

Other methods can also concentrate the activated area of the photoresist layer on a scale much smaller than the exposed light field, including various chemical and heat treatments. With these methods, it becomes possible to create minimum feature sizes less than half a cycle, allowing for increased density-achieved through multiple exposures. The same structure can be translated, effectively doubling the density. However, implementation is not straightforward; the key is to perform a step in subsequent exposures to preserve the previous structure.